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Micro and Nanoelectronic Devices

01UAXPE, 01UAXOQ

A.A. 2020/21

Course Language

Inglese

Course degree

Master of science-level of the Bologna process in Nanotechnologies For Icts (Nanotecnologie Per Le Ict) - Torino/Grenoble/Losanna
Master of science-level of the Bologna process in Ingegneria Elettronica (Electronic Engineering) - Torino

Course structure
Teaching Hours
Lezioni 40
Esercitazioni in laboratorio 20
Teachers
Teacher Status SSD h.Les h.Ex h.Lab h.Tut Years teaching
Donati Guerrieri Simona Professore Associato ING-INF/01 40 0 20 0 4
Teaching assistant
Espandi

Context
SSD CFU Activities Area context
ING-INF/01 6 B - Caratterizzanti Ingegneria elettronica
2020/21
The course is taught in English. The course aims at providing a solid knowledge on the operation of the main semiconductor devices for the micro and nanoelectronics applications. The first part of the course is dedicated to the evolution of the MOS transistor technology, with emphasis on the CMOS applications. The FinFET transistor is addressed both from the technological and the modeling standpoint. The second part of the course is dedicated to emerging nanoelectronic devices, with particular emphasis on CMOS replacement and novel memory/storage devices, including the junctionless transistors, the tunneling transistors and lower dimensionality structures. The course provides the fundamentals for understanding the devices operation, starting from their physical structure and using the concepts of the semiconductor physics. The devices are analyzed at all levels, starting from the fabrication process, the modeling and simulation through CAD tools, highlighting the problems related to non-idealities and scaling issues.
The course is taught in English. The course aims at providing a solid knowledge on the operation of the main semiconductor devices for the micro and nanoelectronics applications. The first part of the course is dedicated to the evolution of the MOS transistor technology, with emphasis on the CMOS applications. The FinFET transistor is addressed both from the technological and the modeling standpoint. The second part of the course is dedicated to emerging nanoelectronic devices, with particular emphasis on CMOS replacement and novel memory/storage devices, including the junctionless transistors, the tunneling transistors and lower dimensionality structures. The course provides the fundamentals for understanding the devices operation, starting from their physical structure and using the concepts of the semiconductor physics. The devices are analyzed at all levels, starting from the fabrication process, the modeling and simulation through CAD tools, highlighting the problems related to non-idealities and scaling issues.
As the outcome of the course, students will be able to - Analyze the behavior of the micro- and nano- scale devices, including the related problematic linked to geometric scaling and technology fabrication issues - Identify the correct models for representation of the electron device behavior, both through analytic/compact models anfd through technology CAD software (Synopsys Sentaurus). - Include the main non-ideality effects into the models (high field, multi-dimensionality, quantum effects, quantum confinement), and link their solution to the main developments of the fabrication technology. - Identify the correct modeling approach for the nano-scale devices - Orient their knowledge and future work within the scenario of the nanoelectronic device research field, with solid background on the problems that still need for solution, the future needs and expected developments both at the technology level and in the area of advanced modeling.
As the outcome of the course, students will be able to - Analyze the behavior of the micro- and nano- scale devices, including the related problematic linked to geometric scaling and technology fabrication issues - Identify the correct models for representation of the electron device behavior, both through analytic/compact models anfd through technology CAD software (Synopsys Sentaurus). - Include the main non-ideality effects into the models (high field, multi-dimensionality, quantum effects, quantum confinement), and link their solution to the main developments of the fabrication technology. - Identify the correct modeling approach for the nano-scale devices - Orient their knowledge and future work within the scenario of the nanoelectronic device research field, with solid background on the problems that still need for solution, the future needs and expected developments both at the technology level and in the area of advanced modeling.
Students must already have a solid background on the semiconductor physics, and in particular on the drift-diffusion model. Furthermore they must have previous knowledge on the fundamental operation of electron devices and in particular of the MOS transisitor.
Students must already have a solid background on the semiconductor physics, and in particular on the drift-diffusion model. Furthermore they must have previous knowledge on the fundamental operation of electron devices and in particular of the MOS transisitor.
- Technology roadmaop and physical limitations of miniaturization. Scenario of the micro- an nano-electronics. (0.45 credits). - Advanced modelling for the MOS transistor. (0.9 credits) - Submicron MOSFET: scaling and nonidealities issues (0.9 credits) - FinFETs (0.6 credits) - Junctionless, Tunneling and Negative Capacitance transistors (0.6 credits) - Emerging technologies (0.6 credits) - Assisted laboratory practice using a commercial CAD tool for the physics-based simulation of semiconductor devices. (1.95 credits)
- Technology roadmaop and physical limitations of miniaturization. Scenario of the micro- an nano-electronics. (0.45 credits). - Advanced modelling for the MOS transistor. (0.9 credits) - Submicron MOSFET: scaling and nonidealities issues (0.9 credits) - FinFETs (0.6 credits) - Junctionless, Tunneling and Negative Capacitance transistors (0.9 credits) - Emerging technologies (0.3 credits) - Assisted laboratory practice using a commercial CAD tool for the physics-based simulation of semiconductor devices. (1.95 credits)
Technical notes on the course for CORONA emergency. Remote teaching: - Lesson: lessons will be partly offline (theory and demonstrations) and partly interactive using the Virtual Classroom Platform (question and answers, exercise). - LAB: LAB will be entirely online using the Virtual Classroom Platform. The group members can interact and work collectively using the Virtual Classroom breakout rooms. A server is available for simulations. Blended teaching: - Lesson: lessons will be partly offline (theory and demonstrations) and partly on site (Politecnico campus) for Q&A and exercise. The on-site lessons will be in any case available also remotely. - LAB: LAB will be partly in the LED facilities of Politecnico and partly online using the Virtual Classroom Platform. Even during the on-site labs, those, who cannot attend, will be able to interact and work both individually and collectively with their group mates using the Virtual Classroom platform. A server is available for simulations. To assist the theory part, teachers notes will be made available for individual study.
Technical notes on the course for CORONA emergency. Remote teaching: - Lesson: lessons will be partly offline (theory and demonstrations) and partly interactive using the Virtual Classroom Platform (question and answers, exercise). - LAB: LAB will be entirely online using the Virtual Classroom Platform. The group members can interact and work collectively using the Virtual Classroom breakout rooms. A server is available for simulations. Blended teaching: - Lesson: lessons will be partly offline (theory and demonstrations) and partly on site (Politecnico campus) for Q&A and exercise. The on-site lessons will be in any case available also remotely. - LAB: LAB will be partly in the LED facilities of Politecnico and partly online using the Virtual Classroom Platform. Even during the on-site labs, those, who cannot attend, will be able to interact and work both individually and collectively with their group mates using the Virtual Classroom platform. A server is available for simulations. To assist the theory part, teachers notes will be made available for individual study.
4 credits of theoretical lessons. 2 credits of assisted CAD laboratory practice using a commercial CAD tool for the physics-based simulation of semiconductor devices. There will be two LAB groups, following the same introduction part (advanced CMOS) and a different second part on specific applications: one LAB group will be dedicated to FinFETs; the other to selected beyond CMOS nanodevices.
4 credits of theoretical lessons. 2 credits of assisted CAD laboratory practice using a commercial CAD tool for the physics-based simulation of semiconductor devices. The LAB work will be in groups. The first 4 labs will be common to all students, including advanced CMOS and FinFETs. In the last 2 labs each group will be assigned a specific topic on advanced technologies, either advanced FinFETs or other selected beyond CMOS nanodevices.
Reference textbook: Yuan Taur, Tak H. Ning Fundamentals of modern VLSI devices Cambridge University Press 2nd edition Teaching material from the professor: - Review of the semiconductor physics required as the background knowledge for this course (self-learning) - Course slides - Guidelines for the lab work -Further material for advanced topics
Reference textbook: Yuan Taur, Tak H. Ning Fundamentals of modern VLSI devices Cambridge University Press 2nd edition Teaching material from the professor: - Review of the semiconductor physics required as the background knowledge for this course (self-learning) - Course slides - Guidelines for the lab work -Further material for advanced topics
Modalità di esame: Prova orale obbligatoria; Prova scritta su carta con videosorveglianza dei docenti; Elaborato progettuale in gruppo;
The exam consists of a written test with 2 open questions on the theoretical part (especially addressing the theory demonstrations and detailed calculations) + an oral exam structured as follows: o discussion of the written part + 1 open question that doesn’t require complicated written formulas (30 min). o discussion of the lab reports (15 min) The detailed list of the theoretical topics for the written and oral exam separately, is given in advance. The written test (1.5 hour) is carried out through the Virtual Classroom platform. Students are required to use their webcam. The webcam will be used for: 1) Entrance/identification: a close-up view of you ID and of your face (we will match with your photo on the ID or the one on the POLITO website) 2) Written test: during the test the webcam must kept always on and be positioned so as to take a wider picture of yourself and your table, where you should have no other material apart of the paper where you will write the answer to the questions 3) Closing/final upload: before closing the Virtual Classroom session, you will be asked to take high resolution photos of your written test. Students are monitored though the webcam while taking the photos. The photos must be taken possibly with a smart phone, or another high resolution device, independent of the one with the webcam that you use for the test. Students are invited to collect the photos in a unique file (either a .zip or a .pdf, with correct page numbering) and upload it in the Elaborati section of the website. The oral exam will be on Virtual classroom, following a schedule agreed in advanced with the students. The final mark for the theory (up to 25 points) will be decided after your discussion on the written test (during the oral). The final mark on the lab (up to 5 points) will also be assigned on the day of the oral and will take into account the mark given for the lab essays and the individual discussion during the lab oral. Up to 3 extra points can be added for distinguished preparation (laude).
Exam: Compulsory oral exam; Paper-based written test with video surveillance of the teaching staff; Group project;
The exam consists 2 theory tests + 1 lab test. The first theory test is a written test (1.5 hour) with 2 open questions on the theoretical part (especially addressing the theory demonstrations and detailed calculations). The second theory test is an oral exam including the discussion of the written part + 1/2 open questions on other topics that don’t require complicated written formulas (30 min). The detailed list of the theoretical topics for the written and oral exam separately, is given in advance. The lab test is oral (15 min) and takes place in the same day of the oral theory. It is aimed at assessing the capability and understanding gained in the numerical simulation of advanced electron devices. The Lab test includes always the discussion of the laboratory reports prepared in groups. The final mark is the sum of the individual marks for the theory and lab parts. The mark for the theory (up to 25 points) will be decided after the oral and includes both the written and oral theory. The final mark on the lab (up to 5 points) will also be assigned on the day of the oral and will take into account both the mark given for the lab essays (group-wise) and the individual discussion during the lab oral exam. Up to 3 extra points can be added for distinguished preparation (laude). Criteria for the online exam: The written test (1.5 hour) is carried out through the Virtual Classroom platform. Students are required to use their webcam. The webcam will be used for: 1) Entrance/identification: a close-up view of you ID and of your face (we will match with your photo on the ID or the one on the POLITO website) 2) Written test: during the test the webcam must kept always on and be positioned so as to take a wider picture of yourself and your table, where you should have no other material apart of the paper where you will write the answer to the questions 3) Closing/final upload: before closing the Virtual Classroom session, you will be asked to take high resolution photos of your written test. Students are monitored though the webcam while taking the photos. The photos must be taken possibly with a smart phone, or another high resolution device, independent of the one with the webcam that you use for the test. Students are invited to collect the photos in a unique file (either a .zip or a .pdf, with correct page numbering) and upload it in the Elaborati section of the website. The oral exam (theory and lab) will be on Virtual classroom, following a schedule agreed in advanced with the students.
Modalità di esame: Prova scritta (in aula); Prova orale obbligatoria; Prova scritta su carta con videosorveglianza dei docenti; Elaborato progettuale in gruppo;
The exam is identical to the one described in the remote exam section. In case a student can take the exam in the Politecnico facilities, the written test can be substituted by an extra oral exam (30 min.) addressing the same theory topics of the written test.
Exam: Written test; Compulsory oral exam; Paper-based written test with video surveillance of the teaching staff; Group project;
The exam is identical to the one described in the remote exam section. In case a student can take the exam in the Politecnico facilities, the written test is synchronous with the online test. Whenever possible the written theory test may be substituted by an extra oral exam (30 min.) addressing the same theory topics of the written test.
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