The course is taught in English. The course aims at providing a solid knowledge on the operation of the main semiconductor devices for the microelectronics applications, with particular emphasis on the MOS transistor for digital applications. The course provides the fundamentals for understanding the electron device operation, starting from their physical structure and using the concepts of the semiconductor physics. The devices are analyzed at all levels, starting from the fabrication process, the modeling and simulation through CAD tools, highlighting the problems related to non-idealities and scaling issues. The FinFET transistor is addressed both from the technological and the modeling standpoint. Emerging microelectronics technologies are introduced.

As the outcome of the course, students will be able to - Analyze the behavior of the micro- and nano- scale MOSFETs, including the related problematic linked to geometric scaling and technology fabrication issues - Identify the correct models for representation of the electron device behavior, both through analytic/compact models anf through technology CAD software (Synopsys Sentaurus). - Include the main non-ideality effects into the models (high field, multi-dimensionality, quantum effects, quantum confinement, ballistic transport), and link their solution to the main developments of the fabrication technology. - Orient their knowledge and future work within the scenario of the microelectronic device research field, with solid background on the problems that still need for solution, the future needs and expected developments both at the technology level and in the area of advanced modeling.

Students must already have a solid background on the semiconductor physics, and in particular on the drift-diffusion model. Furthermore they must have previous knowledge on the fundamental operation of electron devices and in particular of the MOS transisitor.

- MOS operation review. (0.2 credits) - Technology roadmaop and physical limitations of miniaturization. (0.4 credits) - Advanced modelling for the MOS capacitor and the MOSFET. (1.2 credits) - Submicron MOSFET issues (1.2 credits) - FinFETs (0.6 credits) - Emerging technologies (0.4 credits) - Assisted laboratory practice using a commercial CAD tool for the physics-based simulation of semiconductor devices. (2 credits)

4 credits of theoretical lessons. 2 credits of assisted CAD laboratory practice using a commercial CAD tool for the physics-based simulation of semiconductor devices.

Reference textbook: Yuan Taur, Tak H. Ning Fundamentals of modern VLSI devices Cambridge University Press 2nd edition Teaching material from the professor: - Review of the semiconductor physics required as the background knowledge for this course (self-learning) - Course slides - Guidelines for the lab work -Further material for advanced topics

Modalita di esame: Prova orale obbligatoria; Elaborato scritto prodotto in gruppo;

Exam: Compulsory oral exam; Group essay;

... The final exam consists of an oral exam (30 min.) and a laboratory test (15 min.). The oral exam aims at assessing the knowledge of the theoretical part whereas the laboratory test is aimed at assessing the capability gained in the numerical simulation of advanced electron devices. The Lab test includes always the discussion of the laboratory reports prepared in groups. The oral exam vote is up to 25. The lab vote, up to 5 points, summarizes the evaluation of the written laboratory reports (group-wise) and the individual lab exam. The exam is passed only if both the oral and lab parts are sufficient.

Gli studenti e le studentesse con disabilita o con Disturbi Specifici di Apprendimento (DSA), oltre alla segnalazione tramite procedura informatizzata, sono invitati a comunicare anche direttamente al/la docente titolare dell'insegnamento, con un preavviso non inferiore ad una settimana dall'avvio della sessione d'esame, gli strumenti compensativi concordati con l'Unita Special Needs, al fine di permettere al/la docente la declinazione piu idonea in riferimento alla specifica tipologia di esame.