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Technology for Nanoelectronic Systems
01UDAPE
A.A. 2019/20
Course Language
Inglese
Degree programme(s)
Master of science-level of the Bologna process in Nanotechnologies For Icts (Nanotecnologie Per Le Ict) - Torino/Grenoble/Losanna
Course structure
| Teaching | Hours |
|---|---|
| Lezioni | 54 |
| Esercitazioni in laboratorio | 6 |
Lecturers
| Teacher | Status | SSD | h.Les | h.Ex | h.Lab | h.Tut | Years teaching |
|---|---|---|---|---|---|---|---|
| Piccinini Gianluca | Professore Ordinario | IINF-01/A | 27 | 0 | 0 | 0 | 1 |
Co-lectures
Context
| SSD | CFU | Activities | Area context | ING-INF/01 | 6 | B - Caratterizzanti | Ingegneria elettronica |
|---|
2019/20
The subject is compulsory in the study tracks of Nanotechnologies for ICTs Master.
The subject is offered during the first semester of the second year and it is focused on the technological aspects of nanolectronic systems.
The course is taught in English.
The subject is compulsory in the study tracks of Nanotechnologies for ICTs Master.
The subject is offered during the first semester of the second year and it is focused on the technological aspects of nanolectronic systems.
The course is taught in English.
- Knowledge of adavanced processes for FinFET, GAA, TFET.
- Ability of using process simulation tools.
- Knowledge of technologies for 3D integration.
- Knowledge of technologies for heterogeneous integration.
- Knowledge of the main fabrication technologies for nanometer scale systems:
- molecular systems;
- spintronic systems;
- self-assembled systems.
- Knowledge of adavanced processes for FinFET, GAA, TFET.
- Ability of using process simulation tools.
- Knowledge of technologies for 3D integration.
- Knowledge of technologies for heterogeneous integration.
- Knowledge of the main fabrication technologies for nanometer scale systems:
- molecular systems;
- spintronic systems;
- self-assembled systems.
Good knowledge of planar processes.
Deep knowledge of MOS systems and MOSFET devices.
Modelling of nanoscale devices (2D,1D).
Good knowledge of magnetism
Good knowledge of planar processes.
Deep knowledge of MOS systems and MOSFET devices.
Modelling of nanoscale devices (2D,1D).
Good knowledge of magnetism
Advanced MOS processes;
3D integration technology;
Simulation of process workflow for FinFet and TunnelFet;
Heterogeneous integration technology;
Technologies for nanosystems:
- Atomic Layer Deposition;
- Atomic Layer Etching;
- Self-Assembly techniques;
- Nanogap fabrication;
- Nanoimprinting;
- Techniques for single atoms/molecules manipulation.
Advanced MOS processes;
3D integration technology;
Simulation of process workflow for FinFet and TunnelFet;
Heterogeneous integration technology;
Technologies for nanosystems:
- Atomic Layer Deposition;
- Atomic Layer Etching;
- Self-Assembly techniques;
- Nanogap fabrication;
- Nanoimprinting;
- Techniques for single atoms/molecules manipulation.
The course topics will be described considering some relevant cases of study:
- FinFet/Tunnel Fet;
- MEM sensors;
- Molecular circuits;
- Magnetic RAM;
- Self-Assembled systems;
For each of them will be analyzed the technological processes used for the integration in
pervasive nanosystems which will be of high added values for many applications.
The course topics will be described considering some relevant cases of study:
- FinFet/Tunnel Fet;
- MEM sensors;
- Molecular circuits;
- Magnetic RAM;
- Self-Assembled systems;
For each of them will be analyzed the technological processes used for the integration in
pervasive nanosystems which will be of high added values for many applications.
Modalità di esame: Prova scritta (in aula); Prova orale obbligatoria;
Exam: Written test; Compulsory oral exam;
...
The exam is organized:
1) a brief (40 minutes) closed book written section where 7 questions with open answer (max. 100 words) will enable the student to go on the exam if at least 4/7 answers will be right. This section does not contribute to the final score;
2) a 30 minutes oral exam on the whole subjects (classes and practises) will be evaluated in /30.
Gli studenti e le studentesse con disabilità o con Disturbi Specifici di Apprendimento (DSA), oltre alla segnalazione tramite procedura informatizzata, sono invitati a comunicare anche direttamente al/la docente titolare dell'insegnamento, con un preavviso non inferiore ad una settimana dall'avvio della sessione d'esame, gli strumenti compensativi concordati con l'Unità Special Needs, al fine di permettere al/la docente la declinazione più idonea in riferimento alla specifica tipologia di esame.
Exam: Written test; Compulsory oral exam;
The exam is organized:
1) a brief (40 minutes) closed book written section where 7 questions with open answer (max. 100 words) will enable the student to go on the exam if at least 4/7 answers will be right. This section does not contribute to the final score;
2) a 30 minutes oral exam on the whole subjects (classes and practises) will be evaluated in /30.
In addition to the message sent by the online system, students with disabilities or Specific Learning Disorders (SLD) are invited to directly inform the professor in charge of the course about the special arrangements for the exam that have been agreed with the Special Needs Unit. The professor has to be informed at least one week before the beginning of the examination session in order to provide students with the most suitable arrangements for each specific type of exam.