PERIOD: JANUARY Countless applications ranging from signal processing to power generation, from communications to sensing, have been enabled by semiconductor devices. In this view, physics-based modeling tools represent a significant boost to the engineer creativity, allowing to explore innovative device concepts and materials without the need of expensive prototyping campaigns. Even if modeling scientists are working towards sophisticated models to keep up with the extreme integration scales, drift-diffusion is still the present standard for technology computer-aided design (TCAD) simulation in industrial and academic environments. The first part of the course is focused on the backgrounds of drift-diffusion physics-based simulation, aiming to provide awareness about the criticalities of the methodology. To this aim, the students are guided towards the implementation of a TCAD simulator in MATLAB starting from existing templates and routines. After including the main generation-recombination processes, the resulting framework is applied to some electronic and optoelectronic device examples. The second part of the course presents a commercial implementation of the drift-diffusion model: the Synopsys Sentaurus Device simulator. The students are expected to become familiar with its essential features, from drawing simple geometries to scheduling simulation campaigns. As a final outcome, the acquired experience allows to perform cross-validations of the in-house and commercial simulators presented in the course on the examples studied in the first part of the course. Final evaluation is carried through the assessment of individual homework projects.

PART I: Theory and implementation of coupled Poisson-drift-diffusion simulators I.1 Thermodynamic equilibrium: numerical solution of the Poisson-Boltzmann equation (4h) a. Ohmic contacts boundary conditions b. Finite difference discretization of Poisson-Boltzmann equation c. Linearization by the generalized Newton method I.2 Coupled Poisson-drift-diffusion modeling (4h) a. Carrier continuity equations and drift-diffusion constitutive relations b. Stabilized discretization of the drift-diffusion model I.3 Generation-recombination processes (4h) a. Defect-assisted non-radiative recombinations: the Shockley-Read-Hall model b. The radiative recombination model c. Carrier-carrier interactions: the Auger recombination model d. Optical generation in semiconductors PART II: Physics-based simulation with Synopsys Sentaurus Device II.1 Introduction to Synopsys Sentaurus Device (2h) a. Simulation interface: “Workbench” b. Geometry generation tools: “Structure Editor”, “Mesh” c. Performing electrical simulations: “Device” d. Post-processing, visualizing and exporting results: “SVisual”, “Inspect” II.2 Cross-validation of the MATLAB and commercial simulators (6h) a. Silicon diodes b. Narrow-gap photodetectors under illumination

presso iI laboratorio LED2 del DET, ubicato lungo il corridoio del secondo piano della Cittadella, per la pubblicazione sul sito di Scudo. - 28 gennaio, dalle ore 13:00 alle ore 16:00 - 4 febbraio, dalle ore 13:00 alle ore 16:00 - 6 febbraio, dalle ore 09:30 alle ore 12:30 - 13 febbraio, dalle ore 09:30 alle ore 12:30 - 18 febbraio, dalle ore 13:00 alle ore 16:00 .

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Gli studenti e le studentesse con disabilità o con Disturbi Specifici di Apprendimento (DSA), oltre alla segnalazione tramite procedura informatizzata, sono invitati a comunicare anche direttamente al/la docente titolare dell'insegnamento, con un preavviso non inferiore ad una settimana dall'avvio della sessione d'esame, gli strumenti compensativi concordati con l'Unità Special Needs, al fine di permettere al/la docente la declinazione più idonea in riferimento alla specifica tipologia di esame.