PERIOD: NOVEMBER - DECEMBER High frequency electronics is becoming relevant in a continuously growing number of fields, ranging from these concerning space and wireless applications which represent the classical background of the high frequency electronic, to more recent topics concerning medical, security, surveillance and automotive applications. In this framework, the role of active devices able to operate at micro and millimeter wave frequency is crucial. This course is focused to investigate the most recent and advanced electronic devices enabling this kind of operation and to provide a concise, however complete, overview of the problematic related to their usage. In particular the goals that the course pursues are focused to: 1. provide fundamentals on the physic of the advanced active devices for high frequency applications, with emphasis on HEMT and GaN Technology, concerning device class and fabrication process respectively. 2. get students acquainted with device potentialities mainly considering the applications where they are adopted. 3. provide the capabilities to define and understand the requirements for the development of accurate circuit based large signal CAD model, and to analyze the most important device of this kind, today available. 4. supply the concepts concerning the experimental small and large signal characterization at high frequencies of active devices. In particular, the aspects concerning model extraction and interactions with CAD environments will be considered, and addressed. Some hours will be spent in the microwave labs, where practical details and issues on high frequency measurements will be effectively presented and handled. 5. present the principal applications for the high frequency electronic, e.g. power and low noise amplifiers for wireless communication, high frequency digital applications, high frequency switching and phase control circuits Students on going learning will be monitored during the course through the assessment of individual homework projects.

1. Introduction presenting RF and microwave active devices, e.g. FETs and HEMTs, GaN technology. This part will be developed on 5 hour lectures where the device physic together with their principles of working and operating will be presented. 2. High frequency active device modelling. The most important modelling techniques suitable for low noise, small and large signal operation will be illustrated. This part will be developed on 5 hour lectures where also the issue concerning the model embedding on high frequency CADs will be dealt with. 3. High frequency characterization of high frequency devices. The classical and advanced techniques for the small and large signal experimental characterization of high frequency device will be presented. Scattering acquisition, load and source pull at fundamental and harmonics will be presented. The synergy with the model extraction will be cared together with those inherent to the design phase. System level characterizations will be introduced and their relevance for the integration within complex system considered. This part will be developed on 5 hour lectures which will include activity on measurement lab. 4. The last 5 hours of the course will be focused on the most important and advanced high frequency, micro and millimeter wave, device applications. 5G wireless applications, space oriented application. High speed digital applications will be presented and described.

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Gli studenti e le studentesse con disabilità o con Disturbi Specifici di Apprendimento (DSA), oltre alla segnalazione tramite procedura informatizzata, sono invitati a comunicare anche direttamente al/la docente titolare dell'insegnamento, con un preavviso non inferiore ad una settimana dall'avvio della sessione d'esame, gli strumenti compensativi concordati con l'Unità Special Needs, al fine di permettere al/la docente la declinazione più idonea in riferimento alla specifica tipologia di esame.