PORTALE DELLA DIDATTICA

PORTALE DELLA DIDATTICA

PORTALE DELLA DIDATTICA

Elenco notifiche



Quantum modelling of nanodevices: the density gradient approach

01DOIRV

A.A. 2021/22

Course Language

Inglese

Degree programme(s)

Doctorate Research in Ingegneria Elettrica, Elettronica E Delle Comunicazioni - Torino

Course structure
Teaching Hours
Lezioni 10
Esercitazioni in aula 5
Lecturers
Teacher Status SSD h.Les h.Ex h.Lab h.Tut Years teaching
Donati Guerrieri Simona Professore Associato IINF-01/A 10 0 0 0 2
Co-lectures
Espandi

Context
SSD CFU Activities Area context
*** N/A ***    
In the last two decades semiconductor devices have reached the nanoscale and the quantum description of their behaviour is nowadays mandatory for the successful design of the next generation of existing devices or the development of new device concept. One of the characterizing issues of nanodevices is the 1D or 2D electron quantum confinement, calling for a quantum description of the electron gas. The density gradient model (also referred to as the quantum potential model) has become a popular tool to describe these quantum effects in the framework of physics-based TCAD simulators. The density gradient equations can be easily coupled to the conventional semiconductor models, e.g. the drift-diffusion equations, yielding one of the various version of the quantum drift-diffusion models. In this framework, it has become a paradigm in particular for the description of the charge control law of FET transistors, primarily FinFETs, Junctionless Nanotransitors and III-V based heterostructure devices. The density gradient model has been proposed in the literature following various approaches, some based on the extension of the semiconductor thermodynamic theory and others from more fundamental quantum mechanics. The course focuses on the description fo the various derivations, with emphasis on the one based on the moments of the Quantum Boltzmann Transport Equations. The model discretization issues and the implementation into CAD simulators will be also described, both at the theoretical level and with practical hands-on LAB tutorials using an in house quantum drift-diffusion simulator developed in MATLAB. The LAB part of the course will also provide various examples of advanced nanodevices simulated with the density gradient approach in a commercial, state of the art simulator.
Fundamentals of MATLAB programming. Operating principles of the most important electronic semiconductor devices. Basics of quantum mechanics and solid-state physics.
I.1 Introduzione al confinamento nei nanodispositivi elettronici (1h) a. Review of quantum models; introduction to the Density Gradient (DG) approach I.2 The thermodynamic derivation of the DG model (3h) a. The thermodynamic description of the semiconductor equations b. Comparison with the classic Euler fluid model c. The DG model as a modification of the classic equations I.3 The quantum derivation of the DG approach (4 h) a. The single particle perspective and the quantum potential b. The Wigner distribution function and the density matrix c. The quantum Boltzmann Transport Equation (QBTE) d. Moments of the QBTE: derivation of the DG model coupled to the Drift-Diffusion I.4 Discretization and implementation of the DG model in TCAD simulators (2h) a. Discretization of the DG + Drift-Diffusion model b. Implementation issues Lab I. Simulation of semiconductor devices with the DG in a commercial TCAD (2.5h) a. FinFETs b. Fin HEMTs c. Nanowires Lab II. Implementation of DG in an in-house MATLAB software (2.5h)
On site
Laborartory test on experimental practice or informatics - Oral presentation - Team project work development
P.D.2-2 - May
The course will be between May and June