Solid state physics/Electronic devices (Electronic devices)

The course is taught in English. Aim of the Solid state physics/Electronic devices course is to provide the theoretical basics of solid state physics and their applications to solid state electronic devices, with particular emphasis in applications in the area of ICTs and energy. This course plays a central role in the development of an Engineer expert in Nanotechnologies, because it extensively provides the basic elements for the understanding of subsequent courses of the MSc learning program. In the Electronic Devices section, the students learn the basics for understanding the physics and the design of electronic and optoelectronic devices. The students are organized into two teams for the initial 3 ECTS (first module). The first team is composed of students with a limited background in the area of semiconductor devices, in particular junctions and MOSFETs, which have to be learned in order to understand further topics in (opto)electronic devices. The second team is composed of students with an adequate background of semiconductors and basic electronic devices. In both cases the students get (although with different levels of in-depth analysis) the fundamentals of semiconductor device physics, in particular semiclassical models for the analysis and design of (opto)electronic devices and their analytical approximations, functional to study more advanced topics and devices. The second part (3 ECTS, second module) is taught to all students, and covers electronic devices based on compound semiconductors and nanostructures.

Solid state physics/Electronic devices (Solid state Physics)

Aim of the Solid state physics/Electronic devices course is to provide the theoretical basics of solid state physics and their applications to solid state electronic devices, with particular emphasis in applications in the area of ICTs and energy. This course plays a central role in the development of an Engineer expert in Nanotechnologies, because it extensively provides the basic elements for the understanding of subsequent courses of the MSc learning program. The integrated course is divided in two modules. In the Solid State Physics module, the students are organized into two teams for the initial 4 ECTS. The first team is composed of students with a low background in the areas of quantum mechanics and statistics. The second team is composed of students with an adequate background of modern physics. In both cases the students will learn (up to different levels of in-depth analysis) the fundamentals of solid state physics functional to the study of the electronic properties of nanostructured materials. In the second part (2 ECTS) of the first section all students will learn theoretical methods for the prediction of the band structure of conducting/semiconducting solids and nanostructures.

Solid state physics/Electronic devices (Electronic devices)

- Knowledge of electronic and optical properties of semiconductors and nanostructures and of first order transport models. - Knowledge of the operating principles of semiconductor (opto)electronic devices - Ability to apply the basics of semiconductor physics to the understanding of electronic devices - Ability in understanding and interpreting important experimental characterization techniques of semiconductor electronic and optoelectronic devices - Ability to use physics-based models for the analysis and design of the main semiconductor (opto)electronic devices - Ability to derive and use circuit-based models for the analysis of the main semiconductor (opto)electronic devices

Solid state physics/Electronic devices (Solid state Physics)

The students are expected to learn how to apply the principles of modern physics to study ad predict the physical properties of nanostructures. Main anticipated achievements are: - Knowledge of the properties of solid surfaces - Knowledge of electronic and optical properties of solids and nano-structures - Ability to evaluate the effect of confinements on the electronic motion in nanostructures - Ability to evaluate band structures, even in low-dimensional systems - Ability to apply the basics of solid state physics to the understanding of nanodevices - Ability to use physics-based models for the prediction of nanomaterials properties

Solid state physics/Electronic devices (Electronic devices)

- Elementary physics (mechanics, thermodynamics, wave optics, elements of structure of matter) - Elements of modern physics - Elements of electronics

Solid state physics/Electronic devices (Solid state Physics)

- Elementary physics (mechanics, thermodynamics, wave optics, elements of structure of matter) - Elements of modern physics - Elements of electronics

Solid state physics/Electronic devices (Electronic devices)

Team 1 Basics of semiconductors: electronic properties and transport (1 ECTS) p-n junction and MS junction (1 ECTS) MOS system and MOSFET transistor (1 ECTS) Team 2 Review on semiconductors out of equilibrium (0.75 ECTS) Metal Semiconductor junctions (0.6 ECTS) RG mechanisms and generalized junction law (0.75) Solar cells (0.9 ECTS) Team 1+ Team 2 Compound semiconductors, heterostructures and heterojunctions (0.6) MESFET and HEMT (1.2 ECTS) Homo- and Hetero-junction bipolar transistors (1.2 ECTS)

Solid state physics/Electronic devices (Solid state Physics)

Team 1 (4 ECTS) From classical physics to quantum mechanics (0,5 ECTS) Schrodinger equation. Measurement of a physical quantity. Indetermination principle (0,5 ECTS) Analysis of one-dimensional quantum problems, the Schroedinger's equation for an infinite array of potential wells, electrons in crystalline solids (1 ECTS) The gas of photons and phonons (the Bose-Einstein's distribution), the black-body problem, the electron gas (the Fermi-Dirac's distribution). (1 ECTS) Electronic properties of metals and semiconductors Photon-matter interaction (0,5 ECTS) Team 2 (4 ECTS) Surface and interface effects (1 ECTS) Heterojunctions, 2D electron gas and HEMT (1 ECTS) Low dimensionality systems (2 ECTS): quantum wells and quantum wires, the Landauer formula, tunneling through multiple barriers and resonant tunneling, Coulomb blockade, single-electron transistor, 2D materials. Team 1 and 2 (2 ECTS) Applications of quantum simulations to predict the band structures in solids (including low-dimensional systems) (2 ECTS)

Solid state physics/Electronic devices (Electronic devices)

Solid state physics/Electronic devices (Solid state Physics)

Solid state physics/Electronic devices (Electronic devices)

Besides theoretical lectures, the course includes class practices and numerical labs. Class practices propose problems to be solved with analytical techniques (with the possible use of student’s scientific calculator), whereas numerical labs propose group-work sessions dealing with problems to be solved with numerical techniques (with the use of student’s personal computer). These include either more advanced models for a particular class of devices, or the use of numerical fitting techniques to apply analytical models to the analysis of experimental data of real devices. Students are requested to prepare (one per group) a report on 2 numerical labs covering one topic of the first module and one topic of the second module. In each week further exercises are proposed for individual study (homework), whose discussion and solution are provided in the following week.

Solid state physics/Electronic devices (Solid state Physics)

The course consists of theoretical lectures and class practices. The latter include simple problem solving activities, with strict connections to theoretical lectures. In the last part of the Solid State Physics section the students will be involved in a computer laboratory (9 hours) during which they will be guided by the teacher in applying the theoretical methods learned during the theoretical lectures to predict the electronic properties of simple solids and nanostructures.

Solid state physics/Electronic devices (Electronic devices)

For the basics topics: F. Bonani, G. Piccinini, Electronic Devices, CLUT, 2019 R.F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley For more advanced topics: J. Nelson, Physics of solar cells, Imperial College Press, 2003 S.M. Sze, K.K. Ng, Physics of semiconductor devices, Wiley, 2007 U. K. Mishra, J. Singh, Semiconductor Device Physics and Design Material distributed by teachers (slides, notes, homework solution) made available on the course website

Solid state physics/Electronic devices (Solid state Physics)

Team 1 P. Atkins "Molecular Quantum Mechanics" (Cambridge Univ. Press) H. Ibach and H. Luth "Solid-State Physics: An Introduction to Theory and Experiment" (Springer) N. W. Ashcroft ' N. D. Mermin, "Solid state physics" (Brooks Cole) C. Kittel "Introduction to Solid State Physics" (Wiley) Team 2 H. Luth "Solid Surfaces, Interfaces and Thin Films" (Springer) J. Davies "The physics of low-dimensional semiconductors" (Cambridge Univ. Press) Lectures notes produced by the teacher will be available on-line in the course web page.

Solid state physics/Electronic devices (Electronic devices)

Slides; Dispense; Esercizi risolti; Esercitazioni di laboratorio; Video lezioni tratte da anni precedenti; Strumenti di simulazione;

Solid state physics/Electronic devices (Solid state Physics)

Slides; Dispense; Libro di testo; Strumenti di simulazione;

Solid state physics/Electronic devices (Electronic devices)

Modalità di esame: Prova scritta (in aula); Prova orale facoltativa; Elaborato progettuale in gruppo;

Solid state physics/Electronic devices (Solid state Physics)

Modalità di esame: Prova scritta (in aula);

Solid state physics/Electronic devices (Electronic devices)

Exam: Written test; Optional oral exam; Group project;

Solid state physics/Electronic devices (Solid state Physics)

Exam: Written test;

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Solid state physics/Electronic devices (Electronic devices)

The exam is written. It includes numerical exercises and open answer questions and it is aimed at assessing the student ability to analyze the operation of the devices presented during the course. The exam lasts 2 hours and students may use a summary of formulas (provided by the teachers with some possible addition by the students) and a scientific calculator. The written exam - if above threshold - may be complemented by an optional (on request of the student or of the teacher) oral exam. The oral exam is intended to assess the comprehension of the physics of semiconductors, with reference to the models taught in the course, and the operating principle of the devices described during lectures and numerical labs (see also Expected Learning Outcomes). In this case the final mark is given as arithmetic average of the written and oral parts. The maximum mark of written/oral scores 27 points. Students are requested to prepare (in team) a report on 2 numerical labs covering one topic of the first module and one topic of the second module. The reports are scored max 2 points each. These points are added to the written/oral assessment.

Solid state physics/Electronic devices (Solid state Physics)

The Solid State Physics exam consists of a written test aiming at addressing the degree of understanding achieved by the students on the subjects explained during the lectures (see expected learning outcome above). No supporting material is allowed during the exam. The exam aims at assessing the comprehension of the physics of the nanostructures addressed during the lectures and to discuss the application of these nanostructures in innovative electronic devices. When writing the exam sheet the student has to show that he/she is able to rigorously discuss and present the physical models used to describe nanostructure behaviour, highlighting the approximations behind each model. The written test includes multiple-answer questions and statements (to be assessed as true or false) and two open questions on all the course’s subjects. The maximum mark for questions/statements is 12/30, that of open questions is 16/30. The total allotted time is 75 min. The written test is passed with a score of at least 18/30. The individual laboratory report of each student will be graded with a mark in the range 0 to 3 points, this mark will be added to the score obtained in the written exam. The final score of the integrated course will be obtained by averaging the Solid State Physics score with the score obtained for Electrons Devices.

Gli studenti e le studentesse con disabilità o con Disturbi Specifici di Apprendimento (DSA), oltre alla segnalazione tramite procedura informatizzata, sono invitati a comunicare anche direttamente al/la docente titolare dell'insegnamento, con un preavviso non inferiore ad una settimana dall'avvio della sessione d'esame, gli strumenti compensativi concordati con l'Unità Special Needs, al fine di permettere al/la docente la declinazione più idonea in riferimento alla specifica tipologia di esame.