Politecnico di Torino
Politecnico di Torino
Politecnico di Torino
Anno Accademico 2007/08
Radiofrequency devices
Corso di L. Specialistica in Ingegneria Elettronica - Torino
Corso di L. Specialistica in Ingegneria Elettronica (Electronic Engineering) - Torino
Docente Qualifica Settore Lez Es Lab Tut Anni incarico
Ghione Giovanni ORARIO RICEVIMENTO PO ING-INF/01 3 1.4 0.3 0 7
SSD CFU Attivita' formative Ambiti disciplinari
ING-INF/01 6 B - Caratterizzanti Ingegneria elettronica
Obiettivi dell'insegnamento
After a system introduction to analog RF and microwave ICs and their system applications, the related devices (both passive and active) and technologies are covered, including an overview on compound semiconductors for RF and microwaves. Active device modelling (including noise modelling) is introduced within the context of simple RF circuit applications. Circuit applications will be confined to the linear or weakly nonlinear cases.
- The RF and microwave analog interface in communication systems: overview and impact on device and technology choices. Examples of RF transceivers. Examples of the electronic interface in high-speed optoelectronic systems.
- Semiconductors for high-speed ICs: compound semiconductors, alloys and related technologies: GaAs, InP, SiGe. Heterostructures and reduced-dimensionality structures.
- RFICs and MMICs: passive (concentrated, distributed) devices, active devices. Basics of RF FETs and bipolars physics and technology: MOSFETs, MESFETs, HEMTs, HBTs.
- RF transistor models: small-signal, large-signal, noise. Noise in electronic circuits. System parameters of loaded devices: gain, stability, noise figure.
- RF FET-based amplifiers: low-noise, maximum gain, power. Amplifier topologies and examples of integrated implementation. Amplifiers for optoelectronic circuits: low-noise PD front-ends, EOM and EAM drivers.
- CAD analysis of case studies: low-noise amplifiers for front-end stages, power a
Orario delle lezioni
Statistiche superamento esami

Programma definitivo per l'A.A.2007/08

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