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Politecnico di Torino
Academic Year 2009/10
01JCQGH
From micro to nano-electronics
Master of science-level of the Bologna process in Nanotechnologies For Ict Engineering - Torino/Grenoble/Losanna
Teacher Status SSD Les Ex Lab Tut Years teaching
SSD CFU Activities Area context
ING-INF/01 1 B - Caratterizzanti Ingegneria elettronica
Esclusioni:
02JCQ
Objectives of the course
This course will be focus on the physics of short channel MOSFET transistor. The aim of these lectures is to give an overview of the challenges raised by scaling in the nanometer range
Syllabus
Basics of long channel MOS Transistor
Short channel MOSFET :
mobility degradation due to surface roughness
Threshold voltage roll off
Saturation velocity
Quantum effects : confinement and tunneling
Ballistic limit
MOSFET scaling
constant field and constant voltage scaling
Introduction to Roadmap 2002

Programma definitivo per l'A.A.2009/10
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