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Politecnico di Torino
Academic Year 2009/10
01JCZGH
Nano-electronics
Master of science-level of the Bologna process in Nanotechnologies For Ict Engineering - Torino/Grenoble/Losanna
Teacher Status SSD Les Ex Lab Tut Years teaching
SSD CFU Activities Area context
ING-INF/01 2 B - Caratterizzanti Ingegneria elettronica
Objectives of the course
Comprehension of ultimate limitations of microelectronic devices: physical and technological
Understanding of the deep sub-micron (<70nm) innovative CMOS architectures and their limitations
Be able to qualitatively and quantitatively describe the functionality of few-electron devices (single electron transistor and memory, QCA, etc)
Understand the functionality of discrete charge logic cells (SET and QCA)
Learn the new technological evolutions in nanoelectronics and their motivations
Syllabus
Ultimate CMOS technologies and their showstoppers
Phenomena specific to deep submicron devices: non-stationary phenomena (velocity overshoot), ballistic transport, quantum effects, atomic scale parameter fluctuation (fluctuation of number of dopants, interface roughness).
Innovative device architectures (Double-gate MOS transistor 'DGMOS, dynamic threshold MOS transistor ' DTMOS, gate-all-around transistor ' GAA, vertical MOS transistors)
Nano-scale and quantum devices: Single Electron Transistor (SET), quantum wires, few-electron memories, etc.
Hybrid SET-FET circuits
Charge-based circuit architectures: quantum dot cellular automata (QCA)
Carbon Nanotubes: technology, devices and circuits
Spintronics

Programma definitivo per l'A.A.2009/10
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