


Politecnico di Torino  
Academic Year 2017/18  
01RLUPE Solid state physics/Electronic devices 

Master of sciencelevel of the Bologna process in Nanotechnologies For Icts  Torino/Grenoble/Losanna 





Subject fundamentals
The course is taught in English.
Aim of the course (1st semester, 1st year) is to provide the theoretical basics of solid state physics and their applications to solid state electronic devices, with particular emphasis in applications in the area of ICTs and energy. This course plays a central role in the development of an Engineer expert in Nanotechnologies, because it extensively provides the basic elements for the understanding of subsequent courses of the MSc learning program. The integrated course is divided in two sections. In the Solid State Physics section the students are organized into two teams for the initial 4 ECTS. The first team is composed of students with a low background in the areas of quantum mechanics and statistics, which have to be learned in order to understand ensuing subjects in physics of matter and electronic devices. The second team is composed of students with an adequate background of modern physics. In both cases the students get (up to different levels of indepth analysis) the fundamentals of solid state physics functional to study electronic properties of nanostructured materials. The second part of the first section (taught to all students) general methods for the evaluation of the band structure of conducting/semiconducting solids are given. In the Electronic Devices section, the students learn the basics for understanding the physics and the design of electronic devices. 
Expected learning outcomes
 Knowledge of the radiationmatter interaction
 Knowledge of electronic and optical properties of solids and nanostructures.  Indepth knowledge of quantum charge conduction in metals, semiconductors and insulators (bulk and nanostructures)  Knowledge of the effects related to quantum coherence and ballistic regime of electrons in nanostructures  Ability to evaluate the effects related to electronic motion un nanostructures with side confinement  Ability to evaluate band structures, even in lowdimensional systems  Knowledge of the operating principles of semiconductor (opto)electronic devices  Ability to apply the basics of solid state physics to the understanding of electronic devices..  Ability in understanding and interpreting important experimental characterization techniques of semiconductor electronic and optoelectronic devices  Ability to use physicsbased models for the analysis and design of the main semiconductor (opto)electronic devices  Ability to derive and use circuitbased models for the analysis of the main semiconductor (opto)electronic devices 
Prerequisites / Assumed knowledge
 Elementary physics (mechanics, thermodynamics, wave optics, elements of structure of matter)
 Elements of modern physics  Elements of electronics 
Contents
Section: Solid State Physics
Team 1 (4 ECTS) From classical physics to quantum mechanics (0,5 ECTS) Schrodinger equation. Measurement of a physical quantity. Interemination principle (0,5 ECTS) Analysis of onedimensional quantum problems, the Schroedinger's equation for an infinite array of potential wells, electrons in crystalline solids (1 ECTS) The gas of photons and phonons (the BoseEinstein's distribution), the blackbody problem, the electron gas (the FermiDirac's distribution). (1 ECTS) Electronic properties of metals and semiconductors Photonmatter interaction (0,5 ECTS) Team 2 (4 ECTS) The Boltzmann equation and the electrical conductivity of metals (0,5 ECTS) Phonons and electrons (0,5 ECTS) Surface and interface effects (0,5 ECTS) Low dimensionality systems (2 ECTS); graphene, the Landauer formula; resonant tunneling; Coulomb blockade ; singleelectron trasnsistor Elements of spintronics: spintronic transistors (0,5 ECTS) Team 1 and 2 (2 ECTS) The density functional theory (1 ECTS) Applications of the model to determine band structures in solids (including lowdimensional systems) (1 ECTS) Section: Electronic Devices (Team 1 and 2 ) Semiclassical models for the analysis and design of electronic and optoelectronic devices (0,5 ECTS) pn junction and heterojunctions (0,5 ECTS) Homo and Heterojunction bipolar transistors (1 ECTS) Metalsemiconductor junction and MESFET transistors (1,5 ECTS) Heterostructure field effect transistors (HEMT, HFET) (0,5 ECTS) MOS system and MOSFET transistor. (1 ECTS) Photovoltaic effect and solar cells (ECTS) 
Delivery modes
Section: Solid State Physics
Class practices include simple problem solving activities, with strict connections to theoretical lectures. In some cases scientific calculators (students' personal property) may be required. In the second part of this Section (joint student teams) the students will learn how to apply the DFT method to practical cases by informatics practices. Section: Electronic Devices Class practices include problems to be solved with analytical techniques (with the possible use of student’s scientific calculator) and problems to be solved with numerical techniques (with the use of student’s personal computer). In each week further exercises are proposed for individual study (homework), whose discussion and solution is provided in the following week 
Texts, readings, handouts and other learning resources
C. Kittel, Introduction to Solid State Physics (Wiley)
H. Ibach ' H. Luth: SolidState Physics: An Introduction to Theory and Experiment (Springer) N. W. Ashcroft ' N. D. Mermin, Solid state physics (Brooks Cole) Material distributed by teachers Actual texts (selected among those in the list) will be stated by the teacher. 
Assessment and grading criteria
Section: Solid State Physics.
The exam is written. The test includes multipleanswer questions and statements (to be assessed as true or false) and two open questions on all the course’s subjects. The maximum mark of questions/statements is 20/30, that of open questions is 10/30. The total allotted time is 90 min. The final mark can be increased/decrease up to 3 points on the basis of the quality of the reports on the informatics practices. The written test is passed with a score of at least 15/30. Willing students with an assessed knowledge of solidstate physics may ask for an oral test to possibly increase their marks. Section: Electronic Devices Tthe exam is written. It includes numerical exercises and open answer questions and it is aimed at assessing the student ability to analyze the operation of the devices presented during the course. For interested students, with a demonstrated knowledge of elementary semiconductor devices, the written exam may be replaced by a term paper on one of the course topics and an oral exam for discussion of the presented results. 
Notes The integrated course is held by three teachers. Two of them are responsible for the solid state physics section (6 ECTS), the third teacher is responsible for the electronic devices section (6 ECTS). The teachers strictly cooperate in establishing the time schedule in order to provide the students with an attractive and coherent teaching program 
