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Politecnico di Torino
Anno Accademico 2009/10
03JDHGH
Semiconductor devices
Corso di L. Specialistica in Nanotecnologie Per Le Ict (To/Grenoble/Losanna) - Torino/Grenoble/Losanna
Docente Qualifica Settore Lez Es Lab Tut Anni incarico
Cappelluti Federica ORARIO RICEVIMENTO A2 ING-INF/01 3 0.7 0.3 0 4
SSD CFU Attivita' formative Ambiti disciplinari
ING-INF/01 4 B - Caratterizzanti Ingegneria elettronica
Obiettivi dell'insegnamento
Starting from semiconductor physics, the course will give some basic principles of operation of pn junction, Shottky junction and MOS devices
Programma
Pn junction basics: equilibrium band diagram, direct and reverse bias operation, electrostatics, breakdown. Main features of dynamic behaviour
Metal-semiconductor junctions: Schottky barrier, ohmic behaviour
Bipolar transistors: the transistor effect, transistor parameters, VI characteristics. Ebers-Moll model and small-signal equivalent circuits
Field-effect transistos: JFET operation, gradual channel approximation, velocity-saturated regime.
MOS junctions: band diagram, inversion conditions, threshold; the MOS transistor: characteristics, n-channel and p-channel devices. Power MOS devices.
Laboratori e/o esercitazioni
Numerical labs on the course subjects.
Lab on measurements of diode and transistor IV curves
Bibliografia
Semiconductor Devices: Physics and Technology, 2nd Edition
Simon M. Sze, Wiley 2001
Verifica la disponibilita in biblioteca
Orario delle lezioni
Statistiche superamento esami

Programma definitivo per l'A.A.2009/10
Indietro



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