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Politecnico di Torino
Academic Year 2009/10
03JDHGH
Semiconductor devices
Master of science-level of the Bologna process in Nanotechnologies For Ict Engineering - Torino/Grenoble/Losanna
Teacher Status SSD Les Ex Lab Tut Years teaching
Cappelluti Federica ORARIO RICEVIMENTO A2 ING-INF/01 3 0.7 0.3 0 4
SSD CFU Activities Area context
ING-INF/01 4 B - Caratterizzanti Ingegneria elettronica
Objectives of the course
Starting from semiconductor physics, the course will give some basic principles of operation of pn junction, Shottky junction and MOS devices
Syllabus
Pn junction basics: equilibrium band diagram, direct and reverse bias operation, electrostatics, breakdown. Main features of dynamic behaviour
Metal-semiconductor junctions: Schottky barrier, ohmic behaviour
Bipolar transistors: the transistor effect, transistor parameters, VI characteristics. Ebers-Moll model and small-signal equivalent circuits
Field-effect transistos: JFET operation, gradual channel approximation, velocity-saturated regime.
MOS junctions: band diagram, inversion conditions, threshold; the MOS transistor: characteristics, n-channel and p-channel devices. Power MOS devices.
Laboratories and/or exercises
Numerical labs on the course subjects.
Lab on measurements of diode and transistor IV curves
Bibliography
Semiconductor Devices: Physics and Technology, 2nd Edition
Simon M. Sze, Wiley 2001
Check availability at the library

Programma definitivo per l'A.A.2009/10
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