| KEYWORD |
Die-to-die and die-to-wafer connection: Cu-Cu and Al-Al bonding
Parole chiave MICROELETTRONICA, PROCESSI INNOVATIVI, TECNOLOGIE INNOVATIVE
Riferimenti VALENTINA BERTANA, SERGIO FERRERO, LUCIANO SCALTRITO
Gruppi di ricerca AA - Materials and Processes for Micro and Nano Technologies
Tipo tesi SPERIMENTALE APPLICATA
Descrizione Die connections are the key enablers for next generation of Systems-in-Package. During the last decades, many techniques were developed to obtain high quality joints [1]. However, the pure metal bonding requires high temperatures and pressures, making this solution quite unfeasible for ordinary Electronics. In addition, the scale of interconnections shrinks continuously due to super small and extremely fast computing devices, following Moore's Law. Copper-to-copper direct bonding appears to be one of a solution to the limitation of scaling down into sub-micron scale. However modern processes have been developed based on molecular binding of Copper with reasonably low pressure and temperature [2, 3]. The thesis goal is to investigate these new processes and to produce some joint protypes.
The work will be organised as follow:
• Literature review of the major processes
• Definition of a (new) fabrication process
• Definition of the tests needed to check the process
• Implementation of the process
• Results characterisation
[1] Rebhan et al., Cu-Cu Wafer Bonding: An Enabling Technology for Three-Dimensional Integration, 2014
[2] Ong et al., Two-step fabrication process for die-to-die and die-to-wafer Cu-Cu bonds, 2021
[3] Hu et al., Plasma-Activated Cu-Cu and Al-Al Direct Bonding for Electronics Packaging, 2022
Scadenza validita proposta 01/12/2024
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