| KEYWORD |
Area Engineering
Power semiconductor devices – Contact resistance
keywords POWER ELECTRONICS DEVICES, SEMICONDUCTOR PRODUCTION
Reference persons SERGIO FERRERO, LUCIANO SCALTRITO
Research Groups AA - Materials and Processes for Micro and Nano Technologies
Thesis type EXPERIMENTAL APPLIED
Description Power semiconductor devices are key electronic components widely used in all applications, from consumer to automotive, to manage electrical energy from a source and adapt it to load requirements.
The key factor of power devices is efficiency, the ability to move energy from the source to the load with minimal dispersion.
In an ideal world, a power device that operates with forward bias allows current to flow without any resistance, making the device operate with zero power dissipation. In the real world any semiconductor component has its own forward voltage drop when working in forward bias. The voltage drop follows Ohm's law and depends on the circulating current and the intrinsic resistance of the device. This resistance depends on many factors and defines the performance of the device in the final application.
The contact resistance between the anode and cathode metallization and the underlying silicon can become a major factor contributing to the intrinsic resistance of the device. The contact resistance between Al and silicon or Ti/silicon can be characterized through specific measurements and improved with dedicated thermal processes.
The aim of this study is to define a methodology to perform contact resistance measurements between Al and Si and work on the deposition and sintering process of Al to achieve the best interface interaction between these materials that minimizes the contact resistance.
Required skills Semiconductors fabrication processes and material characterization
Deadline 14/02/2025
PROPONI LA TUA CANDIDATURA