| KEYWORD |
Silicon Carbide Schottky Barrier height formation and measurements
keywords POWER ELECTRONICS DEVICES, SEMICONDUCTOR PRODUCTION
Reference persons SERGIO FERRERO, LUCIANO SCALTRITO
Research Groups AA - Materials and Processes for Micro and Nano Technologies
Thesis type EXPERIMENTAL APPLIED
Description The power semiconductor landscape is shifting from silicon to wide bandgap materials like silicon
carbide (SiC) and gallium nitride (GaN). Especially SiC, due to its superior physical properties, wider
bandgap and higher thermal conductivity, has attracted significant industry interest due to the
resulting efficiency improvements. This translates to smaller, lighter devices with lower energy loss.
In order to improve energy efficiency without compromising performances, an advanced study of
the materials that form the Schottky barrier is needed, with particular focus on the characterization
of interfaces under different process conditions.
The experimental work of the thesis will be carried out mainly at Chilab-ITEM facilities, with the
possibility to cover part of the fabrication experiments at Vishay facilities.
Outline
- Si and SiC diode technology training (physics of the device and fabrication methods)
- SiC Schottky diode literature investigation on barrier formation state-of-the-art
- Schottky barrier formation on 4H-SiC diode wafer, in collaboration with Vishay
- Barrier height characterization (electrical, physical, chemical)
Required skills Semiconductors fabrication processes and material characterization
Deadline 30/03/2025
PROPONI LA TUA CANDIDATURA