| KEYWORD |
Design of GaN on Si K-band integrated high efficiency power amplifiers
keywords GAN, HIGH EFFICIENCY, MM-WAVE, POWER AMPLIFIER
Reference persons VITTORIO CAMARCHIA
Research Groups RF and Microwave Electronics
Thesis type RESEARCH / EXPERIMENTAL
Description Participation to the design of high efficiency power amplifiers (Doherty, stacked, others) based on MMIC technology GaN on Si. The activity will be developed together with the University of Cardiff (UK), Aveiro (PT) exploiting the state-of-the-art technology of OMMIC (FR). The projects will be part of an ongoing activity with the European Space Agency and possibly will lead to interships in ESA
Required skills High frequency electronics, use of high frequency cad tools (keysight ADS, National MWO), electromagnetic fields, especially regarding transmission lines theory
Deadline 04/07/2019
PROPONI LA TUA CANDIDATURA