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Laser Thermal Annealing of Silicon Carbide Wafer
Reference persons SERGIO FERRERO, LUCIANO SCALTRITO
Research Groups AA - Materials and Processes for Micro and Nano Technologies
Thesis type EXPERIMENTAL APPLIED
Description Silicon carbide (SiC) devices show significant advantages in power electronics due to their wide bandgap properties.
However, the cost of manufacturing SiC wafers and some processes for manufacturing the devices are still under development. Among these, a key step in the production flow is the post-implantation heat treatment for the recrystallization of the amorphized layer.
The aim of this thesis is to study the annealing process using laser technology in order to obtain a reliable process results for applications in power electronics.
Required skills Semiconductor Materials, Laser Processes
Deadline 16/03/2024
PROPONI LA TUA CANDIDATURA