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Area Engineering

Die-to-die and die-to-wafer connection: Cu-Cu and Al-Al bonding

keywords INNOVATIVE MATERIALS, INNOVATIVE TECHNOLOGIES, MICROELECTRONICS

Reference persons VALENTINA BERTANA, SERGIO FERRERO, LUCIANO SCALTRITO

Research Groups AA - Materials and Processes for Micro and Nano Technologies

Thesis type EXPERIMENTAL - DEVELOPMENT

Description Die connections are the key enablers for next generation of Systems-in-Package. During the last decades, many techniques were developed to obtain high quality joints [1]. However, the pure metal bonding requires high temperatures and pressures, making this solution quite unfeasible for ordinary Electronics. In addition, the scale of interconnections shrinks continuously due to super small and extremely fast computing devices, following Moore's Law. Copper-to-copper direct bonding appears to be one of a solution to the limitation of scaling down into sub-micron scale. However modern processes have been developed based on molecular binding of Copper with reasonably low pressure and temperature [2, 3]. The thesis goal is to investigate these new processes and to produce some joint protypes.

The work will be organised as follow:
Literature review of the major processes
Definition of a (new) fabrication process
Definition of the tests needed to check the process
Implementation of the process
Results characterisation

[1] Rebhan et al., Cu-Cu Wafer Bonding: An Enabling Technology for Three-Dimensional Integration, 2014
[2] Ong et al., Two-step fabrication process for die-to-die and die-to-wafer Cu-Cu bonds, 2021
[3] Hu et al., Plasma-Activated Cu-Cu and Al-Al Direct Bonding for Electronics Packaging, 2022


Deadline 01/12/2024      PROPONI LA TUA CANDIDATURA




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